uwloo

ECE 436Design of Integrated Circuits and Devices

Faculty
Engineering
Last listed
1994–95

No longer offered. It’s in Waterloo’s scanned calendars from 1990–91 to 1994–95 (before that, 1970–71 to 1976–77 used the number for Semiconductor Devices 2 and Semiconductor Devices 2 \); the 1995–96 to 2023–24 calendars are on ucalendar.

Design and process details of bipolar, JFET and MOSFET devices. Design and implementation of digital and analog integrated circuits. Process, device and circuit CAD. Project

As printed in the 1990–91 to 1994–95 calendars, read by OCR; the scanned page is the original. Later calendars (1995–96 on) aren’t on uwloo.

Requirements, as last listed

Prereq: E&CE 209 (231 or 435)

Check it elsewhere

In the scanned calendars

How it read in each calendar from 1970–71 to 1994–95, newest first. The text is OCR of the scanned pages; years whose wording matches are shown once, from the clearest scan. Each year links to its page on uwloo and to that page of the scanned PDF.

1990–91 to 1994–95 5 calendars

Design and process details of bipolar, JFET and MOSFET devices. Design and implementation of digital and analog integrated circuits. Process, device and circuit CAD.

Project

Prereq: E&CE 209 (231 or 435)

Not in the 1977–78 to 1989–90 calendars.

1974–75 to 1976–77 3 calendars

Another title: Semiconductor Devices 2, probably a different course under the same number (or a misread scan).

Integrated Circuits: Techniques for the design and realization of . integrated circuit elements: Resistors, capacitors, diodes, active devices. Simple models for bipolar and MOSFET. Current sources, d.c. level shifting, I.C. biasing, differential and output stages. Design and analysis of logic circuit elements and logic implementation: MOSFET and COSMOS, CMOS, DCTL, DTL, T2L, HT2L and ECL principles. Flip-flops, trigger, comparator, counter and clock circuits. Large scale integration: Active memories, RAM, ROM, shift registers. Prerequisite: EE352 or equivalent

1973–74 1 calendar

Another title: Semiconductor Devices 2 \, probably a different course under the same number (or a misread scan).

Planar technology. Crystal growth-bulk and epitaxial. Imperfections. Diffusion. Oxidation and oxide masking. Monolithic IC’s. FET’s, Shockley model, realization of JFET’s. DC Characteristics, £7 Cy switching behaviour freq. response. Nature of real surfaces, oxide-semiconductor interfaces. Depletion, accumulation, inversion layers. MOS devices, equivalent circuits, models for computer aided design. Prerequisite: EE351 or equivalent 3 hours lectures, 1 hour tutorial, one term.

1970–71 to 1972–73 3 calendars

Another title: Semiconductor Devices 2, probably a different course under the same number (or a misread scan).

A discussion of the physical processes used in fabricating discrete and integrated devices. Junction field effect transistors, surface phenomena, MOS field effect transistors. Device configurations and equivalent circuits. High level effects in bipolar devices, conductivity modulation, high level injection and emitter crowding. Prerequisite: EE 351 or equivalent. 2 lectures, 2 hours seminar, one term.