ECE 435Semiconductor Devices Metal-Semiconductor junctions (Schottky
- Faculty
- Engineering
- Offered
- Fall, Spring
- Credit
- 0.5
- Last listed
- 1994–95
No longer offered. It’s in Waterloo’s scanned calendars from 1970–71 to 1994–95; the 1995–96 to 2023–24 calendars are on ucalendar.
barriers), heterojunctions, solar cells, light emitting diodes, photodetector diodes, JFET’s, MESFET’s, MOSFET’s, VLSI bipolar and MOS devices, CCD's, power devices (SCR's, power switching transistors, PIN rectifier diodes).
As printed in the 1990–91 to 1994–95 calendars, read by OCR; the scanned page is the original. Later calendars (1995–96 on) aren’t on uwloo.
Check it elsewhere
- Undergraduate Calendar, 1995–96If it ran past 1994–95, on ucalendar
- Course outlinesSyllabi from past terms (UW login)
- UW FlowStudent ratings and reviews
- WClassesPast sections back to 2004, and who taught them
In the scanned calendars
How it read in each calendar from 1970–71 to 1994–95, newest first. The text is OCR of the scanned pages; years whose wording matches are shown once, from the clearest scan. Each year links to its page on uwloo and to that page of the scanned PDF.
1990–91 to 1994–95 5 calendars
barriers), heterojunctions, solar cells, light emitting diodes, photodetector diodes, JFET’s, MESFET’s, MOSFET’s, VLSI bipolar and MOS devices, CCD's, power devices (SCR's, power switching transistors, PIN rectifier diodes).
Offered Fall, Spring · 3 class, 1 tutorial hours a week · 0.5 credit
Not in the 1977–78 to 1989–90 calendars.
1975–76 to 1976–77 2 calendars
Titled Semiconductor Devices 1.
Relaxation times, scattering mechanisms, ionisation rates, avalanche and Zener breakdown, recombination models, Review of p-n junction theory. Selected topics from: Photo devices, solar cells, Silicon controlled rectifiers, microwave devices, Schottky, varactor
or light emitting diodes, junction field-effect devices. Prerequisites: EE351 or equivalent
Not in the 1974–75 calendar.
1973–74 1 calendar
Titled Semiconductor Devices 1.
Selected topics from the following: Review of p-n junction theory. Shockley-Reed recombination model. Drift mobility, dependence on doping level and electric field. Dielectric relaxation time, scattering mechanisms, ionization rates, breakdown mechanisms, avalanche, zener, backward and emitting devices. The SCR, IMPATT devices, Schottky diodes, MIS, varactor diodes. Prerequisites: EE351 or equivalent. 3 hours lectures, 1 hour tutorial, one term.
.
va Department of Electrical Engineering
1970–71 to 1972–73 3 calendars
Titled Semiconductor Devices 1.
Basic physical processes affecting device characteristics. Space charge generation and recombination. Scattering, mobility, saturation of drift velocity. Avalanche multiplication, Zener diodes. Field emission, space-charge limited current flow, Schottky diodes. Tunnel and back-diodes. Photo-diodes, radiation detectors. Prerequisite: EE 351 or equivalent. 2 lectures, 2 hours seminar, one term.